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High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

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7 Author(s)
Yung-Chun Wu ; Org. Light Emitting Diode Div., AU Optronics Corp., Hsinchu, Taiwan ; Chang, Ting-Chang ; Liu, Po-Tsun ; Cheng-Wei Chou
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In this study, pattern-dependent nickel (Ni) metal-induced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage (Vth) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low Vth, a steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowire-channel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics.

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Nanotechnology, IEEE Transactions on  (Volume:5 ,  Issue: 3 )