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TWIn SONOS TransistOR (TWISTOR) for 2-bit/cell SONOS Memory Technology

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14 Author(s)
Byung Yong Choi ; ISRC & Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ. ; Byung-Gook Park ; Jong Duk Lee ; Hyungcheol Shin
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In terms of nonvolatile memory device characteristics, the optimal device parameters for the TWISTOR (twin SONOS transistor) structure are investigated. Through this study, we show the best performance of 80nm gate TWISTOR device, which are very promising solution of future 2-bit/cell SONOS technology

Published in:

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop

Date of Conference:

12-16 Feb. 2006