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Ultra-uniform threshold voltage in SONOS-type non-volatile memory with novel charge trap layer formed by plasma nitridation

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10 Author(s)
Sunamura, H. ; Syst. Devices Res. Labs., NEC Corp., Sagamihara ; Masuzaki, K. ; Terai, M. ; Kotsuji, S.
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We have proposed a new method to prepare thin nitrogen-based charge trap layer for scaled-down SONOS with thin EOT (<12nm). Devices employing an ONO prepared by the newly proposed method, a N2-plasma treated base oxide topped by an HTO, showed unprecedented Vth uniformity, carrier localization and good retention characteristics. An overall comparison with Si3N 4-SONOS is given. They also offer excellent transistor characteristics (high on-current and low Vth), making them ideal for future scaled low-voltage embedded applications with fast readout

Published in:

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Date of Conference:

12-16 Feb. 2006