Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Cycling behavior of nitride charge profile in NROM-type memory cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Cycling of NROM-type memory cells leads to a dipolar distribution inside the nitride layer. This effect is due to a mismatch between hole and electron injected profiles resulting from conventional NROM operation. An extraction technique based on CP measurements allows the detailed observation of the mismatch. The proposed model explains the relation between the charge distributions and the cycling behavior which is experimentally confirmed by changing the programming and erasing conditions

Published in:

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Date of Conference:

12-16 Feb. 2006