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New Cell Structure with Edge-thick Tunnel Oxide for Highly Reliable NAND Flash Memory Devices

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17 Author(s)
Tae-Kyung Kim ; Semicond. Res. Center, Samsung Electron. Co. Ltd., Gyeonggi ; Jaihyuk Song ; Changsub Lee ; Dongyean Oh
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One of the most important performances of NAND flash memory is reliability characteristics, such as program/erase cycling and data retention. Tunnel oxide quality is essential to the reliability and it is well known that tunnel oxide degradation during FN (Fowler-Nordheim) stress is due to the oxide trap and interface trap generation. It is believed that trapping mainly occurs where tunnel oxide is locally thin. For example, conventional SAP (self-aligned poly) process with shallow trench isolation, tunnel oxide at active edge is necessarily thinner than active channel. In this paper, we proposed a new process scheme to fabricate optimized tunnel oxide thickness varying from active center to edge, and we confirmed the improvement of reliability characteristics such as Vth shift and interface trap density during endurance cycling

Published in:

2006 21st IEEE Non-Volatile Semiconductor Memory Workshop

Date of Conference:

12-16 Feb. 2006