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Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs

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6 Author(s)
R. J. Trew ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Yueying Liu ; L. Bilbro ; Weiwei Kuang
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Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a nonlinear source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the nonlinear source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The nonlinear source resistance degrades RF performance and limits amplifier linearity.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:54 ,  Issue: 5 )