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Wafer-Level Transfer of Thermo-Piezoelectric Si3N4Cantilever Array on a CMOS Circuit for High Density Probe-Based Data Storage

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9 Author(s)
Young-Sik Kim ; LG Electronics Institute of Technology, Seoul, Korea, Phone: 82-2-526-4582, Fax.: 82-2-3461-3508, E-mail: ; Hyo-Jin Nam ; SeongSoo Jang ; Lee, Caroline Sunyong
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In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric Si3N4cantilevers. The thermo-piezoelectric Si3N4cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34X34 thermo-piezoelectric Si3N4cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.

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Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on

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