By Topic

Ultrahigh-performance 8-GHz SiGe power HBT

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Guogong Wang ; Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA ; Hao-Chih Yuan ; Zhenqiang Ma

This letter has demonstrated the state-of-the-art SiGe power heterojunction bipolar transistors (HBTs) operating at 8 GHz. In a common-base configuration, a continuous wave output power of 27.72 dBm with a concurrent power gain of 12.19 dB was measured at a peak power-added efficiency of 60.6% from a single SiGe HBT with a 3-μm emitter finger stripe width and a 1340 μm2 total emitter area. The highest power-performance figure of merit (FOM) of 3.8×105 mW/spl middot/GHz2 achieved from the device was resulted from using an optimized SiGe heterostructure and a compact device layout, which is made possible with a heavily doped base region.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )