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High-performance poly-silicon TFTs using HfO2 gate dielectric

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5 Author(s)
Chia-Pin Lin ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Tsui, Bing-Yue ; Ming-Jui Yang ; Ruei-Hao Huang
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High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-κ (HfO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-κ gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the ON-state current of high-κ gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (Vth) rolloff property is also demonstrated. All of these results suggest that high-κ gate dielectric is a good choice for high-performance TFTs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )