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Advanced poly-Si TFT with fin-like channels by ELA

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11 Author(s)
Huaxiang Yin ; Nano Devices Lab., Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea ; Wenxu Xianyu ; Hans Cho ; Xiaoxin Zhang
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The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V·s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )