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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks

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10 Author(s)
Singanamalla, R. ; Interuniv. Microelectron. Center, Heverlee, Belgium ; Yu, H.Y. ; Pourtois, G. ; Ferain, I.
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The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON interfaces has been investigated. The electrical signatures of these gate stacks indicate that the concentration of Hf-Ti and Ti-Si bonds at the (poly-Si/TiN)/HfSiON and (poly-Si/TiN)/SiO2 interface plays a significant role on the control of the gate stacks' WF. The density of these interfacial bonds and the related work function changes are correlated to the degree of nucleation of the TiN film on the dielectric.

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Electron Device Letters, IEEE  (Volume:27 ,  Issue: 5 )