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Piezoelectric GaN sensor structures

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10 Author(s)
T. Zimmermann ; Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany ; M. Neuburger ; P. Benkart ; F. J. Hernandez-Guillen
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Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron-mobility transistor (HEMT) structure have been realized, and the piezoresponse has been characterized. Cantilever bending experiments resulted in a Young's modulus of approximately 250 GPa, a sensitivity of K∼90, and a modulation of the HEMT current of up to 50%. It is seen that the piezoresponse could be related to both the bulk properties and the properties of the heterostructure interface.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 5 )