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A DC to 10-GHz 6-b RF MEMS time delay circuit

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11 Author(s)
Nordquist, C.D. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Dyck, W. ; Kraus, M. ; Reines, I.C.
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A 6-b radio frequency (RF) microelectromechanical system (MEMS) time-delay circuit operating from dc to 10 GHz with 393.75-ps total time delay is presented. The circuit is fabricated on 250-μm-thick alumina and uses metal contacting RF MEMS switches to realize series-shunt SP4T switching networks. The circuit demonstrates 1.8+/-0.6 dB of loss at 10 GHz and has linear phase response across the entire band with accuracy of better than a least significant bit for most states.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 5 )