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A monolithic Ku-band phase shifter employing voltage tunable Bi1.5Zn1.0Nb1.5O7 (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175° was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit ∼50°/dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.