By Topic

Distributed phase shifter with pyrochlore bismuth zinc niobate thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jaehoon Park ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Lu, J.W. ; Boesch, D.S. ; Stemmer, Susanne
more authors

A monolithic Ku-band phase shifter employing voltage tunable Bi1.5Zn1.0Nb1.5O7 (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175° was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit ∼50°/dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 5 )