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Threshold voltage shifts in decananometre-gate AlGaN/GaN HEMTs

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6 Author(s)
Endoh, A. ; Fujitsu Labs. Ltd, Atsugi Kanagawa, Japan ; Yamashita, Y. ; Hikosaka, K. ; Matsui, T.
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Decananometre-T-shaped-Ni/Pt/Au-gate AlGaN/GaN HEMTs on sapphire substrates are fabricated and their DC characteristics measured. The negative shifts of threshold voltages occur below 5-6 of channel aspect ratio Lg/d, where Lg is the gate length and d is the AlGaN barrier layer thickness. This is a similar trend as observed in AlGaAs/GaAs HEMTs. The negative threshold voltage shifts are enhanced with increasing d, which results from the increase of the two-dimensional electron gas thickness.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 8 )

Date of Publication:

13 April 2006

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