By Topic

Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Kondo, M. ; Renesas Technol. Corp., Gunma, Japan ; Sugii, N. ; Miyamoto, M. ; Hoshino, Y.
more authors

Strained-silicon MOSFETs with both high breakdown voltage and low leakage current needed for RF/analog applications were investigated. Proper control of junction-depth profile and strained-silicon-layer thickness significantly improved transconductance, on resistance, and leakage current. Breakdown voltage of strained-silicon MOSFETs was the same as silicon MOSFETs even at elevated temperatures. RF/analog performances, such as cutoff frequency and 1/f noise, were improved by this technology while keeping high-driving-voltage capability.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 5 )