Cart (Loading....) | Create Account
Close category search window

Proton-implanted shallow-ridge quantum-cascade laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Semtsiv, M.P. ; Phys. Dept., Humboldt-Univ., Germany ; Dressler, S. ; Muller, U. ; Knigge, S.
more authors

We demonstrate a shallow-ridge quantum-cascade laser (QCL) with performance comparable or better than that of deep-ridge QCLs fabricated from the same wafer. The shallow-ridge QCL emits at ≈4 μm with a 4.6-4.8 kA/cm2 threshold current density at room temperature which is similar to the deep-ridge QCL. At the same time the shallow-ridge QCL shows a better temperature stability, T0=160 K, than the deep-ridge QCL, with T0=120 K. The increase in the characteristic temperature of the shallow-ridge laser compared to the deep-ridge laser results from the improved heat dissipation out of the laser ridge through the lateral heat flow. Lateral spreading of the injection current-usually a drawback of shallow-ridge lasers-is suppressed by proton implantation into the strain-compensated InGaAs-AlAs active region layers on either side of the ridge. In contrast to the case of In0.53Ga0.47As layers and of In0.53Ga0.47As-In0.52Al0.48As heterostructures lattice matched to InP, the proton implantation of strain-compensated In0.73Ga0.27As-AlAs heterostructure on InP creates deep (180 meV) carrier traps, resulting in this material being electrically insulating even at room temperature.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 5 )

Date of Publication:

May 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.