By Topic

Static Model Verification of IRF Power MOSFETs Using Fluke Temperature Probe (80T-150U) and Performance Comparison of TEHPWM Methods

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
S. Jeevananthan ; Pondicherry Eng. Coll. ; P. Dananjayan

Due to the increasing power density and switching frequency of power converters the thermal investigation and thermal management are important for overall design process at high power and high frequency requirements. Much of the work on pulse width modulation (PWM) has been focused on improving output quality, reducing switching losses etc., but less emphasis on the more practical issues of implementation and thermal behavior in terms of device utilization factors. Development of static model for International Rectifier power MOSFET's and verification through 80T-150U Fluke temperature probe is the prime objective of this paper. Secondly, the thermal equalization PWM (TEPWM) methods, which improve the thermal management by equalizing switching losses of all the power switches of H-bridge inverter, are compared experimentally for frequency range from 10 kHz to 80 kHz. A detailed design procedure with stage-to-stage hardware debugging for high frequency PWM inverter is also presented

Published in:

2005 International Conference on Power Electronics and Drives Systems  (Volume:1 )

Date of Conference:

0-0 0