By Topic

Ultrathin gate-oxide breakdown-reversibility at low voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Cheung, K.P. ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Solid-insulator breakdown always leads to a permanent conduction path that is irreversible. This is a built-in assumption in all gate-oxide breakdown reliability measurement and lifetime projection. This assumption is not valid when the gate-oxide thickness is less than 2 nm and the operation voltage is 1 V or less. The authors examine the impact of reversible breakdown using breakdown data from 12 000 devices stressed by plasma charging damage. The data support the notion that when the surge current is limited at breakdown, the breakdown event may not leave any mark such as a permanent conduction path. The implication is that the commonly used accelerated-stress test, such as time dependent dielectric breakdown (TDDB), may be underestimating the actual gate-oxide lifetime by as much as a million folds.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:6 ,  Issue: 1 )