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A statistical technique X-IDDQ for extracting defect information from IDDQ data is presented that is effective for detection of defects in ICs. The technique treats the IDDQ measurements in a holistic manner to come up with a statistic X that is highly correlated to the presence of defects. X-IDDQ facilitates binning of ICs and enhances the test process by early identification of faults. The transformation metrics, for evaluating X statistic from IDDQ measurements, obtained using one batch works extremely well for different batches, facilitating its use with manufacturing-line testing.