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A fast testing of electromigration immunity using noise measurement technique

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4 Author(s)
Komori, Junko ; Mitsubishi Electr. Corp., Hyogo, Japan ; Takata, Y. ; Mitsuhashi, J. ; Tsubouchi, N.

A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f2) are performed on a test pattern with stress gradients under high current density up to 2×107 A/cm 2. Each of the measurements is completed within a few minutes. The temperature of the interconnections (200°C for a current density of 2×107 A/cm2) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation

Published in:

Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on

Date of Conference:

18-20 Mar 1990

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