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This paper reports on the results of a highly efficient monolithically fully-integrated SiGe Class E power amplifier using envelope tracking techniques for EDGE applications. The envelope-tracking (ET) system includes a discrete linear op-amp and a switching power converter. The RF Class E amplifier was fabricated in a 0.18 μm BiCMOS SiGe technology. The RF Class E power amplifier achieved a collector efficiency (CE) of 62.7% and the overall power added efficiency (PAE) of the ET system is 44.4% at an output power of 20.4 dBm for an 881 MHz EDGE modulated signal. A discrete envelope switching amplifier achieved 82.8% efficiency while driving the Class E PA voltage supply. The linearized SiGe PA passed the stringent EDGE transmit spectrum mask.