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A new polysilicon resistor model considering geometry dependent voltage characteristics for the deep sub-micron CMOS process

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4 Author(s)
Seok Yong Ko ; DongbuAnam Semicond., Kyunggi-do, South Korea ; Jin Soo Kim ; Gwang Hyeon Lim ; Sung Ki Kim

The conventional resistor model for circuit simulation cannot describe voltage coefficient change along with different width and length resistors. In this paper, resistor geometry dependence on voltage coefficient was studied and a new model was proposed to enhance the accuracy. In addition, parameter extraction methodology for this model was introduced.

Published in:
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on

Date of Conference: 6-9 March 2006

Page(s):
27 - 30
Print ISBN:
1-4244-0167-4
INSPEC Accession Number:
8902794
Digital Object Identifier :
10.1109/ICMTS.2006.1614268
Product Type:
Conference Publications

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