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Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.
Date of Publication: April 2006