High-temperature operation normal incident 256×256 InAs-GaAs quantum-dot infrared photodetector focal plane array

In this letter, a 256×256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The demonstrated original real-time nonuniformity corrected thermal images of hot soldering iron head with 30-Hz frame rate for the FPA are observed. Without additional light-coupling scheme, the QDIP FPA module is first operated at temperatures higher than 135 K under normal-incident condition with a 30° field of view and f/2 optics. For single device performances, a similar QDIP device with a 30-period InAs-GaAs QD structure is fabricated under the same processing procedure. High specific detectivity D^* 1.5×10¹⁰ cm·Hz¹2//W and low noise current density 5.3×10^-13 A/Hz¹2/ at applied voltage 0.3 V are observed.