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High-temperature operation normal incident 256×256 InAs-GaAs quantum-dot infrared photodetector focal plane array

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9 Author(s)
Tang, Shiang-Feng ; Mater. & Electro-Opt. Res. Div., Chung-Shan Inst. of Sci. & Technol., Taoyuan, Taiwan ; Cheng-Der Chiang ; Ping-Kuo Weng ; Yau-Tang Gau
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In this letter, a 256×256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated. The demonstrated original real-time nonuniformity corrected thermal images of hot soldering iron head with 30-Hz frame rate for the FPA are observed. Without additional light-coupling scheme, the QDIP FPA module is first operated at temperatures higher than 135 K under normal-incident condition with a 30° field of view and f/2 optics. For single device performances, a similar QDIP device with a 30-period InAs-GaAs QD structure is fabricated under the same processing procedure. High specific detectivity D* 1.5×1010 cm·Hz12//W and low noise current density 5.3×10-13 A/Hz12/ at applied voltage 0.3 V are observed.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 8 )