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Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-μm wavelength

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3 Author(s)
Wu, Y.-S. ; Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan ; Shi, J.-W. ; Chiu, P.-H.

We developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTC-PD is modified, can achieve excellent performance at a 1.55-μm wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 8 )