Referenced Items are not available for this document.
Design and measured results of a fully integrated 5.7-GHz CMOS low-noise amplifier (LNA) is presented. To design this LNA, the parasitic input resistance of a metal-oxide-semiconductor field-effect transistor (MOSFET) is converted to 50Ω by a simple L-C network, hence eliminating the need for source degeneration. It is shown, by means of compact expressions, that this matching method enhances the effective transconductance of the LNA by a factor that is inversely proportional to a MOSFET's input resistance. The effect of our proposed method on the noise figure (NF) of the LNA is also discussed. With an 11.45-dB power gain and a 3.4-dB NF at 4mW of dc power, the presented LNA achieves the best overall performance when compared with the most recently published LNAs.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:16
,
Issue:
4
)
Date of Publication: April 2006
- Page(s):
- 188 - 190
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 8974500
- Digital Object Identifier :
- 10.1109/LMWC.2006.872128
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 03 April 2006
- Issue Date :
- April 2006
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
