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Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V

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4 Author(s)
O'Sullivan, J.A. ; Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland ; McCarthy, K.G. ; Murphy, A.C. ; Murphy, P.J.

This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:16 ,  Issue: 4 )