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This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-μm BiCMOS process.