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Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate dielectrics

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1 Author(s)
Matsushita, D. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama

The reaction mechanism of nitrogen atoms with Si was investigated based on first principles calculations and experimental results to realize ultra thin SiN-based SiON films with high insulation and good interfacial properties. Incorporation rate of nitrogen atoms into Si has a great influence on arranging 3-fold coordinated N atoms uniformly. By arranging 3-fold coordinated N atoms into the Si sub-surface layer uniformly, oxidation-resistant Si3N4 film can be formed and O atoms were successfully incorporated into the SiN/Si interface with minimum disruption of SiN structures. By using this novel process, a high-quality ultra-thin gate SiON film with an equivalent oxide thickness (EOT) of 0.7 nm and a leakage current (Jg) of 95 A/cm2, i.e., 1/10 or less than that of traditional SiON films was realized. Mobility is not reduced to less than 89% of an ideal SiO2 film

Published in:

Advanced Thermal Processing of Semiconductors, 2005. RTP 2005. 13th IEEE International Conference on

Date of Conference:

4-7 Oct. 2005