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Thermal behavior of visible AlGaInP-GaInP ridge laser diodes

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3 Author(s)
Martin, O.J.F. ; IBM Zurich Res. Lab., Ruschlikon, Switzerland ; Bona, Gian-Luca ; Wolf, P.

The thermal behavior of visible AlGaInP-GaInP ridge laser diodes was investigated numerically and experimentally. It is shown that various parameters critically influence the thermal resistance, R , of such devices. R is inversely proportional to the thermal conductivity of the heat sink. A substantial improvement in R is achieved for junction-side-down mounting compared to junction-side-up. R depends strongly on the width, w, of the ridge, and this effect is different for junction-side-up or junction-side-down mounting. In the first case, R~log(w) and in the second, R~1/w. The thickness of the soldering material is a sensitive parameter which may increase the value of R by up to 15 K/W. For junction-side-up mounted devices, the top metallization layer has a very favorable effect: a 1-μm-thick gold layer reduces R by 30%. It is shown that when a laser is switched on, the thermal steady state is reached in the millisecond time range. The experimental results show very good agreement with numerical data

Published in:

Quantum Electronics, IEEE Journal of  (Volume:28 ,  Issue: 11 )

Date of Publication:

Nov 1992

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