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Dependence of the frequency shift of the optical-microwave double resonance signal in the Cs D2 line on the pumping frequency and power of a GaAs semiconductor laser

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3 Author(s)
S. Yamaguchi ; Dept. of Electr. Eng., Aichi Coll. of Technol., Japan ; I. Matsuda ; M. Suzuki

The OMDR (optical-microwave double resonance) effect in the Cs D2 line was studied for realizing a gas-cell-type Cs atomic frequency standard. A glass cell containing Cs with buffer gases (Ar/N2=1.26, total pressure=39 torr) was placed in a TE012 mode microwave cavity at a temperature of 45°C and was pumped using a GaAs semiconductor laser frequency locked to an external interferometer tuned to the 6P3/2 (F=2,3,4)←6 S1/2(F=3) transition. The OMDR signal appearing at the resonance to the F=4←3 hyperfine transition of the 6S1/2 state shifted with detuning of the laser frequency and with change of the laser and microwave powers. The dependence of the shift on these variables around an optimum operating condition was obtained as, ΔνMW[Hz]=-(0.31±0.02) {1+(0.44±0.15) (ΔPL/PL)} ΔνL [MHz]-10(ΔVMW/V MW)

Published in:

IEEE Journal of Quantum Electronics  (Volume:28 ,  Issue: 11 )