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Novel ESD protection design methodology and latchup prevention for a 0.5-/spl mu/m CMOS ASIC library

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4 Author(s)
Wang Yuan ; Inst. of Microelectron., Peking Univ., Beijing ; Jia Song ; Chen Zhongjian ; Ji Lijiu

In this paper, instead of the traditional experience-based trial-and-error ESD design approach, a novel ESD protection design methodology is proposed, which resolves the costly and time-consuming problems of high-performance ESD protection development in deep-submicron CMOS technology. And this novel design method is conducted and verified in a 0.5-mum CMOS technology to accomplish I/O cell design of a CMOS ASIC library, whose human-body-model ESD level can be great than 4.5kV. To effectively improve latchup free capability, latchup prevention design is also discussed

Published in:

ASIC, 2005. ASICON 2005. 6th International Conference On  (Volume:2 )

Date of Conference:

24-0 Oct. 2005

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