By Topic

New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
M. J. Kumar ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India ; A. A. Orouji ; H. Dhakad

A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.

Published in:

IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 4 )