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New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

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3 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India ; Orouji, A.A. ; Dhakad, H.

A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 4 )

Date of Publication:

April 2006

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