By Topic

A novel operation method to avoid over-erasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wen-Jer Tsai ; Macronix Int. Co. Ltd., Hsinchu, Taiwan ; Nian-Kai Zous ; Tahui Wang ; Ku, Y.-H.J.
more authors

By using the charge pumping technique, it was found that the injected-hole occupied percentage increases with respect to the whole channel, and overerasure thus happens in a scaled trapping-nitride storage Flash memory cell. Such overerasure can be avoided or can be recovered if the cell is suitably biased during the erase operation. Moreover, the erase threshold voltage can be well controlled by the applied erase gate voltage. The reason is that both the channel-hot electrons and the band-to-band tunneling-induced hot holes would inject at the same time and are in balance as a specific surface potential is achieved. Based on this study, a self-limited soft program, as well as a self-saturated erase scheme, is proposed. Applications of this concept to multilevel programming are also demonstrated.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 4 )