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Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation

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4 Author(s)
Havaldar, D.S. ; Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India ; Katti, G. ; DasGupta, N. ; DasGupta, A.

The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation of subthreshold slope and threshold voltage with device geometry and doping concentration in the channel has been studied.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 4 )