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Design and performance of an InGaAs-InP single-photon avalanche diode detector

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10 Author(s)
S. Pellegrini ; Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK ; R. E. Warburton ; L. J. J. Tan ; Jo Shien Ng
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This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

Published in:

IEEE Journal of Quantum Electronics  (Volume:42 ,  Issue: 4 )