Cart (Loading....) | Create Account
Close category search window

A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tao Wang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Chun-Hao Chen ; Yo-Sheng Lin ; Shey-Shi Lu

A CMOS-process-compatible backside inductively coupled-plasma (ICP) dry etching technology to form deep trenches underneath the inductors of RF ICs is developed to enhance the performance of RF ICs with on-chip inductors. A 1-12.6-GHz CMOS distributed amplifier (DA) was designed and implemented in a standard CMOS process. The DA exhibits good input 1-dB compression point (P1 dB) of -2 dBm and input third intercept point of 7 dBm both at 2.4 and 5.8 GHz. The authors demonstrate that a significant improvement in power gain (S21) and noise figure (NF) can be achieved by conducting the proposed backside ICP dry etching to selectively remove the silicon underneath the inductors of the DA. The result shows that a 1.06-dB increase in S21 (from 9.7 to 10.76 dB) and a 0.87-dB decrease (from 5.51 to 4.64 dB) in NF are achieved at 5.8 GHz mainly due to the improvement of the quality factor of the inductors in the DA. This means that this backside ICP dry-etching technique is very promising for system-on-a-chip applications.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 4 )

Date of Publication:

April 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.