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High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

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4 Author(s)
Po-Yi Kuo ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Tien-Sheng Chao ; Ren-Jie Wang ; Lei, Tan‐Fu

In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 4 )