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A Ge quantum dot (QD) light-emitting diode (LED) is demonstrated using a MOS tunneling structure for the first time. The oxide film was grown by liquid phase deposition at 50°C to reduce the thermal budget. The infrared emission of ∼1.5 μm was observed from Ge QD MOS LEDs, similar to the p-type-intrinsic-n-type structure reported previously. At the negative gate bias, the electrons in the Al gate electrode tunnel to the Ge QD through the ultrathin oxide and recombine radiatively with holes to emit the ∼1.5μm infrared. The electrons also recombine with holes in the Si cap, and the band edge emission from Si is also observed.