By Topic

A low-profile antenna solution for mobile phones with GSM, UMTS and WLAN operation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
A. Rennings ; Dept. of Eng., Duisburg-Essen Univ., Duisburg, Germany ; S. Otto ; A. Pimpertz ; P. Waldow

A novel low-profile antenna solution for mobile communication devices consisting of a first antenna for EGSM and DCS, a second dual-band antenna for the Tx and Rx bands of UMTS and a third antenna for standards operating in the ISM 2.4 GHz and 5 GHz frequency bands (WLAN and Bluetooth) is presented in this paper. Our antenna concept is based on a dual-layer approach. The λ/4 resonances of the radiators on top and bottom layer are used to form a dual-band resonator antenna. The main advantage of the proposed structure is the very low profile of the antenna with no additional height above the substrate. This might be an issue for other multi-band antennas based on a folded planar inverted-F antenna (PIFA). In the future devices for mobile communication become even smaller than today. A minimal height (flatness) of these products is a design criteria. Our printed antenna arrangement is an ideal candidate for those applications. The performance of the antenna test board has been simulated using commercial FDTD/FEM software tools. These simulation results have been validated with measurements on a fabricated prototypes.

Published in:

2005 European Microwave Conference  (Volume:3 )

Date of Conference:

4-6 Oct. 2005