A wideband fully integrated SiGe BiCMOS medium power amplifier

In this paper, a wideband 3.0GHz-5.5GHz medium power amplifier has been designed and fabricated using 0.8/spl mu/m SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This Medium PA is a two stage design with all matching components and bias circuits integrated on-chip. A P1dB of 16.5dBm has been measured with a power gain of 8.5dB at 4.2GHz with a total current consumption of 130mA from a 2.5 V supply voltage at 25/spl deg/C. The measured 3dB bandwidth is 2.5 GHz, which is a very good result for a fully integrated medium PA. The fabricated circuit occupies a die area of 1.7mm /spl times/ 0.8mm.