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A wideband fully integrated SiGe BiCMOS medium power amplifier

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6 Author(s)
Hyun-Cheol Bae ; Dept. of High Speed SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Sang-Hoon Kim ; Young-Joo Song ; Sang-Heung Lee
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In this paper, a wideband 3.0GHz-5.5GHz medium power amplifier has been designed and fabricated using 0.8μm SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This Medium PA is a two stage design with all matching components and bias circuits integrated on-chip. A P1dB of 16.5dBm has been measured with a power gain of 8.5dB at 4.2GHz with a total current consumption of 130mA from a 2.5 V supply voltage at 25°C. The measured 3dB bandwidth is 2.5 GHz, which is a very good result for a fully integrated medium PA. The fabricated circuit occupies a die area of 1.7mm × 0.8mm.

Published in:

2005 European Microwave Conference  (Volume:3 )

Date of Conference:

4-6 Oct. 2005