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A MEMS capacitor with improved RF power handling capability

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4 Author(s)
D. Girbau ; Dept. of Signal Theor. & Commun., Univ. Politecnica de Catalunya, Barcelona, Spain ; N. Otegi ; L. Pradell ; A. Lazaro

This paper presents a structure of MEMS capacitor providing independence of its nominal capacity and tuning range from the applied RF signal power. The capacitor includes a third parallel plate acting as an electrode to which an extra DC voltage is applied to compensate for the self-actuation effect. This means that the device can be used in many applications working under different RF power conditions, without changing its performance - nominal capacity and tuning range. Capacitor design concept and simulations are provided. It has been manufactured using a standard surface-micromachining MEMS technology. Experimental results are presented, validating the concept and demonstrating its feasibility and advantages.

Published in:

2005 European Microwave Conference  (Volume:3 )

Date of Conference:

4-6 Oct. 2005