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A 4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with on-chip output matching

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6 Author(s)
Bakalski, W. ; Infineon Technol. AG, Munich, Germany ; Vasylyev, A. ; Simburger, W. ; Kall, M.
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A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1×0.9 mm2. At 1V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output power for a maximum 3%. Error vector magnitude (EVM) is 16 dBm. The PA survives a VSWR of 50.

Published in:

Microwave Conference, 2005 European  (Volume:3 )

Date of Conference:

4-6 Oct. 2005

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