By Topic

Fully integrated differential 24 GHz receiver using a 0.8 μm SiGe HBT technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
E. Sonmez ; Dept. of Electron Devices & Circuits, Ulm Univ., Germany ; S. Chartier ; C. Schick ; A. Trasser
more authors

In this paper, the authors demonstrate a fully integrated, differential 24 GHz receiver using a commercially available 0.8 μm Si/SiGe HBT technology. The integrated components are a low-noise amplifier, voltage-controlled oscillator, buffer, down-converter quadrature mixer and 16:1 static frequency divider. The conversion gain was measured to be 33 dB for an intermediate frequency of 200 MHz with an input compression point of -27 dBm. Special emphasis has been placed on the electrical isolation of function blocks on-chip.

Published in:

2005 European Microwave Conference  (Volume:2 )

Date of Conference:

4-6 Oct. 2005