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Fully integrated differential 24 GHz receiver using a 0.8 μm SiGe HBT technology

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5 Author(s)
Sonmez, E.. ; Dept. of Electron Devices & Circuits, Ulm Univ., Germany ; Chartier, S. ; Schick, C.. ; Trasser, A.
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In this paper, the authors demonstrate a fully integrated, differential 24 GHz receiver using a commercially available 0.8 μm Si/SiGe HBT technology. The integrated components are a low-noise amplifier, voltage-controlled oscillator, buffer, down-converter quadrature mixer and 16:1 static frequency divider. The conversion gain was measured to be 33 dB for an intermediate frequency of 200 MHz with an input compression point of -27 dBm. Special emphasis has been placed on the electrical isolation of function blocks on-chip.

Published in:

Microwave Conference, 2005 European  (Volume:2 )

Date of Conference:

4-6 Oct. 2005