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A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

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14 Author(s)
C. C. Yeh ; Technol. Dev. Center, Macronix Int. Co.,Ltd, Hsinchu ; W. J. Tsai ; T. C. Lu ; Y. R. Chen
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A novel silicon-nitride based light-emitting transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 mum2 is demonstrated for display and optical communication purposes

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005