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Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

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4 Author(s)
D. Connelly ; Acorn Technol., Palo Alto, CA ; P. Clifton ; C. Faulkner ; D. E. Grupp

Simulations of metal (Schottky) source/drain (S/D) ultra-thin-body fully depleted SOI n-channel MOSFETs, single and dual gate, were performed using parameters associated with ITRS LSTP targets for 2006 through 2018. By optimizing S/D-to-channel underlap for a given S/D barrier height, off-current can be reduced to match the ITRS LSTP specification for each year. ITRS on-current targets then establish limits on the S/D barrier height

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005