Referenced Items are not available for this document.
The single polysilicon, non-self-aligned bipolar transistor in a 0.5-μm BiCMOS technology has been converted to a double polysilicon, fully self-aligned bipolar device with little increase in process complexity. Improved bipolar performance in the form of smaller base resistance, larger knee current, higher peak cutoff frequency, and shorter ECL gate delay has been demonstrated. This technology will prove useful in meeting the requirements for higher performance in fast, high-density SRAM circuits
Published in:
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Date of Conference: 9-10 Sep 1991
- Page(s):
- 17 - 20
- Meeting Date :
- 09 Sep 1991-10 Sep 1991
- Print ISBN:
- 0-7803-0103-X
- INSPEC Accession Number:
- 4224826
- Conference Location :
- Minneapolis, MN
- Digital Object Identifier :
- 10.1109/BIPOL.1991.160947
- Product Type:
- Conference Publications
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