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Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

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5 Author(s)
Gen Tsutsui ; Inst. of Ind. Sci., Tokyo Univ. ; Saitoh, M. ; Saraya, T. ; Nagumo, T.
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This paper reports the first experimental demonstration of electron mobility enhancement due to the volume inversion at relatively high Ninv region (6times1012 cm-2 ) in (HO)-oriented UTB DG nMOSFETs with the tbody range of less than 5 nm. The physical origin of mobility enhancement is attributable to: (1) the suppression of surface roughness scattering by relaxed electric field; and (2) negligibly small degradation of the mobility limited by deltatSOI-induced scattering compared to SG that severely degrades mobility in (100)-oriented UTB DG nMOSFETs by quantum confinement

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005