Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

This paper reports the first experimental demonstration of electron mobility enhancement due to the volume inversion at relatively high N
_inv
region (6times10
¹²
cm
^-2
) in (HO)-oriented UTB DG nMOSFETs with the t
_body
range of less than 5 nm. The physical origin of mobility enhancement is attributable to: (1) the suppression of surface roughness scattering by relaxed electric field; and (2) negligibly small degradation of the mobility limited by delta
_tSOI
-induced scattering compared to SG that severely degrades mobility in (100)-oriented UTB DG nMOSFETs by quantum confinement