By Topic

Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

23 Author(s)
Mathew, L. ; Freescale Semicond. Inc., Austin, TX ; Sadd, M. ; Kalpat, S. ; Zavala, M.
more authors

In this paper we demonstrate for the first time a novel CMOS IT-FET (inverted T channel FET) architecture. We demonstrate well functional ITFET SRAM bit-cells. Vertical devices such as FinFET and planar ultra thin body devices have been shown to exhibit good short channel control and proposed for future device scaling. The ITFET is novel device architecture that takes advantage of both vertical and horizontal thin-body devices. A doped channel IT-FET process has been developed and is the focus of this paper. This technology can be scaled beyond 45nm technologies using undoped channels. An ITFET device comprises of an ultra thin body planar horizontal channels and vertical channels in a single device. The devices have multi-gate control around these channels to improve short channel control. A single device has multiple orientations and hence mobility enhancement of both (110) and (100) planes can be used optimally. The devices presented have 15nm planar horizontal thin body and 40nm vertical channels of 100nm height, 17Aring gate dielectric and 50nm gate length. These devices are especially useful in circuits that need ratioing such as in SRAM cells and a well functional SRAM cell is demonstrated

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005